Experimental verification of epsilon-near-zero plasmon polariton modes in degenerately doped semiconductor nanolayers

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dc.contributor.authorCampione, Salvatore
dc.contributor.authorKim, Iltai
dc.contributor.authorde Ceglia, Domenico
dc.contributor.authorKeeler, Gordon A.
dc.contributor.authorLuk, Ting S.
dc.date.accessioned2022-03-01T23:51:40Z
dc.date.available2022-03-01T23:51:40Z
dc.date.issued2016
dc.description.abstractWe investigate optical polariton modes supported by subwavelength-thick degenerately doped semiconductor nanolayers (e.g. indium tin oxide) on glass in the epsilon-near-zero (ENZ) regime. The dispersions of the radiative (R, on the left of the light line) and non-radiative (NR, on the right of the light line) ENZ polariton modes are experimentally measured and theoretically analyzed through the transfer matrix method and the complex-frequency/real-wavenumber analysis, which are in remarkable agreement. We observe directional near-perfect absorption using the Kretschmann geometry for incidence conditions close to the NR-ENZ polariton mode dispersion. Along with field enhancement, this provides us with an unexplored pathway to enhance nonlinear optical processes and to open up directions for ultrafast, tunable thermal emission.en_US
dc.description.abstractWe investigate optical polariton modes supported by subwavelength-thick degenerately doped semiconductor nanolayers (e.g. indium tin oxide) on glass in the epsilon-near-zero (ENZ) regime. The dispersions of the radiative (R, on the left of the light line) and non-radiative (NR, on the right of the light line) ENZ polariton modes are experimentally measured and theoretically analyzed through the transfer matrix method and the complex-frequency/real-wavenumber analysis, which are in remarkable agreement. We observe directional near-perfect absorption using the Kretschmann geometry for incidence conditions close to the NR-ENZ polariton mode dispersion. Along with field enhancement, this provides us with an unexplored pathway to enhance nonlinear optical processes and to open up directions for ultrafast, tunable thermal emission.
dc.identifier.citationCampione, S., Kim, I., de Ceglia, D., Keeler, G.A. and Luk, T.S., 2016. Experimental verification of epsilon-near-zero plasmon polariton modes in degenerately doped semiconductor nanolayers. Optics express, 24(16), pp.18782-18789.en_US
dc.identifier.citationCampione, S., Kim, I., de Ceglia, D., Keeler, G.A. and Luk, T.S., 2016. Experimental verification of epsilon-near-zero plasmon polariton modes in degenerately doped semiconductor nanolayers. Optics express, 24(16), pp.18782-18789.
dc.identifier.doihttps://doi.org/10.1364/OE.24.018782
dc.identifier.urihttps://hdl.handle.net/1969.6/90215
dc.language.isoen_USen_US
dc.language.isoen_US
dc.publisherOptica Publishing Groupen_US
dc.publisherOptica Publishing Group
dc.subjectexperimentalen_US
dc.subjectepsilon-near-zeroen_US
dc.subjectplasmon polaritonen_US
dc.subjectsemiconductoren_US
dc.subjectnanolayersen_US
dc.subjectexperimental
dc.subjectepsilon-near-zero
dc.subjectplasmon polariton
dc.subjectsemiconductor
dc.subjectnanolayers
dc.titleExperimental verification of epsilon-near-zero plasmon polariton modes in degenerately doped semiconductor nanolayersen_US
dc.titleExperimental verification of epsilon-near-zero plasmon polariton modes in degenerately doped semiconductor nanolayers
dc.typeAnimationen_US
dc.typeAnimation

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